Added the following parameter to the DRAMCtrl class:
- bank_groups_per_rank
This defaults to 1. For the DDR4 case, the default is overridden to indicate
bank group architecture, with multiple bank groups per rank.
Added the following delays to the DRAMCtrl class:
- tCCD_L : CAS-to-CAS, same bank group delay
- tRRD_L : RAS-to-RAS, same bank group delay
These parameters are only applied when bank group timing is enabled. Bank
group timing is currently enabled only for DDR4 memories.
For all other memories, these delays will default to '0 ns'
In the DRAM controller model, applied the bank group timing to the per bank
parameters actAllowedAt and colAllowedAt.
The actAllowedAt will be updated based on bank group when an ACT is issued.
The colAllowedAt will be updated based on bank group when a RD/WR burst is
issued.
At the moment no modifications are made to the scheduling.
Add the following delay to the DRAM controller:
- tCS : Different rank bus turnaround delay
This will be applied for
1) read-to-read,
2) write-to-write,
3) write-to-read, and
4) read-to-write
command sequences, where the new command accesses a different rank
than the previous burst.
The delay defaults to 2*tCK for each defined memory class. Note that
this does not correspond to one particular timing constraint, but is a
way of modelling all the associated constraints.
The DRAM controller has some minor changes to prioritize commands to
the same rank. This prioritization will only occur when the command
stream is not switching from a read to write or vice versa (in the
case of switching we have a gap in any case).
To prioritize commands to the same rank, the model will determine if there are
any commands queued (same type) to the same rank as the previous command.
This check will ensure that the 'same rank' command will be able to execute
without adding bubbles to the command flow, e.g. any ACT delay requirements
can be done under the hoods, allowing the burst to issue seamlessly.
This patch fixes a bug in the DRAM controller address decoding. In
cases where the DRAM burst size (e.g. 32 bytes in a rank with a single
LPDDR3 x32) was smaller than the channel interleaving size
(e.g. systems with a 64-byte cache line) one address bit effectively
got used as a channel bit when it should have been a low-order column
bit.
This patch adds a notion of "columns per stripe", and more clearly
deals with the low-order column bits and high-order column bits. The
patch also relaxes the granularity check such that it is possible to
use interleaving granularities other than the cache line size.
The patch also adds a missing M5_CLASS_VAR_USED to the tCK member as
it is only used in the debug build for now.
This patch adds a DRAMPower flag to enable off-line DRAM power
analysis using the DRAMPower tool. A new DRAMPower flag is added
and a follow-on patch adds a Python script to post-process the output
and order it based on time stamps.
The long-term goal is to link DRAMPower as a library and provide the
commands through function calls to the model rather than first
printing and then parsing the commands. At the moment it is also up to
the user to ensure that the same DRAM configuration is used by the
gem5 controller model and DRAMPower.
This patch adds the index of the bank and rank as a field so that we can
determine the identity of a given bank (reference or pointer) for the
power tracing. We also grab the opportunity of cleaning up the
arguments used for identifying the bank when activating.
This patch extends the current timing parameters with the DRAM cycle
time. This is needed as the DRAMPower tool expects timestamps in DRAM
cycles. At the moment we could get away with doing this in a
post-processing step as the DRAMPower execution is separate from the
simulation run. However, in the long run we want the tool to be called
during the simulation, and then the cycle time is needed.
This patch adds the tRTP timing constraint, governing the minimum time
between a read command and a precharge. Default values are provided
for the existing DRAM types.
This patch merges the two control paths used to estimate the latency
and update the bank state. As a result of this merging the computation
is now in one place only, and should be easier to follow as it is all
done in absolute (rather than relative) time.
As part of this change, the scheduling is also refined to ensure that
we look at a sensible estimate of the bank ready time in choosing the
next request. The bank latency stat is removed as it ends up being
misleading when the DRAM access code gets evaluated ahead of time (due
to the eagerness of waking the model up for scheduling the next
request).
This patch adds the write recovery time to the DRAM timing
constraints, and changes the current tRASDoneAt to a more generic
preAllowedAt, capturing when a precharge is allowed to take place.
The part of the DRAM access code that accounts for the precharge and
activate constraints is updated accordingly.
This patch adds power states to the controller. These states and the
transitions can be used together with the Micron power model. As a
more elaborate use-case, the transitions can be used to drive the
DRAMPower tool.
At the moment, the power-down modes are not used, and this patch
simply serves to capture the idle, auto refresh and active modes. The
patch adds a third state machine that interacts with the refresh state
machine.
This patch adds a state machine for the refresh scheduling to
ensure that no accesses are allowed while the refresh is in progress,
and that all banks are propely precharged.
As part of this change, the precharging of banks of broken out into a
method of its own, making is similar to how activations are dealt
with. The idle accounting is also updated to ensure that the refresh
duration is not added to the time that the DRAM is in the idle state
with all banks precharged.
This patch changes the read/write event loop to use a single event
(nextReqEvent), along with a state variable, thus joining the two
control flows. This change makes it easier to follow the state
transitions, and control what happens when.
With the new loop we modify the overly conservative switching times
such that the write-to-read switch allows bank preparation to happen
in parallel with the bus turn around. Similarly, the read-to-write
switch uses the introduced tRTW constraint.
This patch adds stats for tracking the number of reads/writes per bus
turn around, and also adds hysteresis to the write-to-read switching
to ensure that the queue does not oscilate around the low threshold.
This patch renames the not-so-simple SimpleDRAM to a more suitable
DRAMCtrl. The name change is intended to ensure that we do not send
the wrong message (although the "simple" in SimpleDRAM was originally
intended as in cleverly simple, or elegant).
As the DRAM controller modelling work is being presented at ISPASS'14
our hope is that a broader audience will use the model in the future.
--HG--
rename : src/mem/SimpleDRAM.py => src/mem/DRAMCtrl.py
rename : src/mem/simple_dram.cc => src/mem/dram_ctrl.cc
rename : src/mem/simple_dram.hh => src/mem/dram_ctrl.hh
