Commit graph

7 commits

Author SHA1 Message Date
Andreas Hansson
60799dc552 mem: Merge DRAM latency calculation and bank state update
This patch merges the two control paths used to estimate the latency
and update the bank state. As a result of this merging the computation
is now in one place only, and should be easier to follow as it is all
done in absolute (rather than relative) time.

As part of this change, the scheduling is also refined to ensure that
we look at a sensible estimate of the bank ready time in choosing the
next request. The bank latency stat is removed as it ends up being
misleading when the DRAM access code gets evaluated ahead of time (due
to the eagerness of waking the model up for scheduling the next
request).
2014-05-09 18:58:48 -04:00
Andreas Hansson
b8631d9ae8 mem: Add tWR to DRAM activate and precharge constraints
This patch adds the write recovery time to the DRAM timing
constraints, and changes the current tRASDoneAt to a more generic
preAllowedAt, capturing when a precharge is allowed to take place.

The part of the DRAM access code that accounts for the precharge and
activate constraints is updated accordingly.
2014-05-09 18:58:48 -04:00
Andreas Hansson
87f4c956c4 mem: Add DRAM power states to the controller
This patch adds power states to the controller. These states and the
transitions can be used together with the Micron power model. As a
more elaborate use-case, the transitions can be used to drive the
DRAMPower tool.

At the moment, the power-down modes are not used, and this patch
simply serves to capture the idle, auto refresh and active modes. The
patch adds a third state machine that interacts with the refresh state
machine.
2014-05-09 18:58:48 -04:00
Andreas Hansson
babf072c1c mem: Ensure DRAM refresh respects timings
This patch adds a state machine for the refresh scheduling to
ensure that no accesses are allowed while the refresh is in progress,
and that all banks are propely precharged.

As part of this change, the precharging of banks of broken out into a
method of its own, making is similar to how activations are dealt
with. The idle accounting is also updated to ensure that the refresh
duration is not added to the time that the DRAM is in the idle state
with all banks precharged.
2014-05-09 18:58:48 -04:00
Andreas Hansson
5c2c3f598e mem: Make DRAM read/write switching less conservative
This patch changes the read/write event loop to use a single event
(nextReqEvent), along with a state variable, thus joining the two
control flows. This change makes it easier to follow the state
transitions, and control what happens when.

With the new loop we modify the overly conservative switching times
such that the write-to-read switch allows bank preparation to happen
in parallel with the bus turn around. Similarly, the read-to-write
switch uses the introduced tRTW constraint.
2014-05-09 18:58:48 -04:00
Andreas Hansson
a00383a40a mem: Track DRAM read/write switching and add hysteresis
This patch adds stats for tracking the number of reads/writes per bus
turn around, and also adds hysteresis to the write-to-read switching
to ensure that the queue does not oscilate around the low threshold.
2014-03-23 11:12:14 -04:00
Andreas Hansson
7c18691db1 mem: Rename SimpleDRAM to a more suitable DRAMCtrl
This patch renames the not-so-simple SimpleDRAM to a more suitable
DRAMCtrl. The name change is intended to ensure that we do not send
the wrong message (although the "simple" in SimpleDRAM was originally
intended as in cleverly simple, or elegant).

As the DRAM controller modelling work is being presented at ISPASS'14
our hope is that a broader audience will use the model in the future.

--HG--
rename : src/mem/SimpleDRAM.py => src/mem/DRAMCtrl.py
rename : src/mem/simple_dram.cc => src/mem/dram_ctrl.cc
rename : src/mem/simple_dram.hh => src/mem/dram_ctrl.hh
2014-03-23 11:12:12 -04:00
Renamed from src/mem/simple_dram.hh (Browse further)