gem5/ext/mcpat/cacti/crossbar.cc
Anthony Gutierrez e553a7bfa7 ext: add McPAT source
this patch adds the source for mcpat, a power, area, and timing modeling
framework.
2014-04-01 12:44:30 -04:00

161 lines
7.2 KiB
C++

/*****************************************************************************
* McPAT/CACTI
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* Copyright 2012 Hewlett-Packard Development Company, L.P.
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***************************************************************************/
#include "crossbar.h"
#define ASPECT_THRESHOLD .8
#define ADJ 1
Crossbar::Crossbar(
double n_inp_,
double n_out_,
double flit_size_,
TechnologyParameter::DeviceType *dt
):n_inp(n_inp_), n_out(n_out_), flit_size(flit_size_), deviceType(dt)
{
min_w_pmos = deviceType->n_to_p_eff_curr_drv_ratio*g_tp.min_w_nmos_;
Vdd = dt->Vdd;
CB_ADJ = 1;
}
Crossbar::~Crossbar(){}
double Crossbar::output_buffer()
{
//Wire winit(4, 4);
double l_eff = n_inp*flit_size*g_tp.wire_outside_mat.pitch;
Wire w1(g_ip->wt, l_eff);
//double s1 = w1.repeater_size *l_eff*ADJ/w1.repeater_spacing;
double s1 = w1.repeater_size * (l_eff <w1.repeater_spacing? l_eff *ADJ/w1.repeater_spacing : ADJ);
double pton_size = deviceType->n_to_p_eff_curr_drv_ratio;
// the model assumes input capacitance of the wire driver = input capacitance of nand + nor = input cap of the driver transistor
TriS1 = s1*(1 + pton_size)/(2 + pton_size + 1 + 2*pton_size);
TriS2 = s1; //driver transistor
if (TriS1 < 1)
TriS1 = 1;
double input_cap = gate_C(TriS1*(2*min_w_pmos + g_tp.min_w_nmos_), 0) +
gate_C(TriS1*(min_w_pmos + 2*g_tp.min_w_nmos_), 0);
// input_cap += drain_C_(TriS1*g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
// drain_C_(TriS1*min_w_pmos, PCH, 1, 1, g_tp.cell_h_def)*2 +
// gate_C(TriS2*g_tp.min_w_nmos_, 0)+
// drain_C_(TriS1*min_w_pmos, NCH, 1, 1, g_tp.cell_h_def)*2 +
// drain_C_(TriS1*min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
// gate_C(TriS2*min_w_pmos, 0);
tri_int_cap = drain_C_(TriS1*g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
drain_C_(TriS1*min_w_pmos, PCH, 1, 1, g_tp.cell_h_def)*2 +
gate_C(TriS2*g_tp.min_w_nmos_, 0)+
drain_C_(TriS1*min_w_pmos, NCH, 1, 1, g_tp.cell_h_def)*2 +
drain_C_(TriS1*min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
gate_C(TriS2*min_w_pmos, 0);
double output_cap = drain_C_(TriS2*g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
drain_C_(TriS2*min_w_pmos, PCH, 1, 1, g_tp.cell_h_def);
double ctr_cap = gate_C(TriS2 *(min_w_pmos + g_tp.min_w_nmos_), 0);
tri_inp_cap = input_cap;
tri_out_cap = output_cap;
tri_ctr_cap = ctr_cap;
return input_cap + output_cap + ctr_cap;
}
void Crossbar::compute_power()
{
Wire winit(4, 4);
double tri_cap = output_buffer();
assert(tri_cap > 0);
//area of a tristate logic
double g_area = compute_gate_area(INV, 1, TriS2*g_tp.min_w_nmos_, TriS2*min_w_pmos, g_tp.cell_h_def);
g_area *= 2; // to model area of output transistors
g_area += compute_gate_area (NAND, 2, TriS1*2*g_tp.min_w_nmos_, TriS1*min_w_pmos, g_tp.cell_h_def);
g_area += compute_gate_area (NOR, 2, TriS1*g_tp.min_w_nmos_, TriS1*2*min_w_pmos, g_tp.cell_h_def);
double width /*per tristate*/ = g_area/(CB_ADJ * g_tp.cell_h_def);
// effective no. of tristate buffers that need to be laid side by side
int ntri = (int)ceil(g_tp.cell_h_def/(g_tp.wire_outside_mat.pitch));
double wire_len = MAX(width*ntri*n_out, flit_size*g_tp.wire_outside_mat.pitch*n_out);
Wire w1(g_ip->wt, wire_len);
area.w = wire_len;
area.h = g_tp.wire_outside_mat.pitch*n_inp*flit_size * CB_ADJ;
Wire w2(g_ip->wt, area.h);
double aspect_ratio_cb = (area.h/area.w)*(n_out/n_inp);
if (aspect_ratio_cb > 1) aspect_ratio_cb = 1/aspect_ratio_cb;
if (aspect_ratio_cb < ASPECT_THRESHOLD) {
if (n_out > 2 && n_inp > 2) {
CB_ADJ+=0.2;
//cout << "CB ADJ " << CB_ADJ << endl;
if (CB_ADJ < 4) {
this->compute_power();
}
}
}
power.readOp.dynamic = (w1.power.readOp.dynamic + w2.power.readOp.dynamic + (tri_inp_cap * n_out + tri_out_cap * n_inp + tri_ctr_cap + tri_int_cap) * Vdd*Vdd)*flit_size;
power.readOp.leakage = n_inp * n_out * flit_size * (
cmos_Isub_leakage(g_tp.min_w_nmos_*TriS2*2, min_w_pmos*TriS2*2, 1, inv) *Vdd+
cmos_Isub_leakage(g_tp.min_w_nmos_*TriS1*3, min_w_pmos*TriS1*3, 2, nand)*Vdd+
cmos_Isub_leakage(g_tp.min_w_nmos_*TriS1*3, min_w_pmos*TriS1*3, 2, nor) *Vdd+
w1.power.readOp.leakage + w2.power.readOp.leakage);
power.readOp.gate_leakage = n_inp * n_out * flit_size * (
cmos_Ig_leakage(g_tp.min_w_nmos_*TriS2*2, min_w_pmos*TriS2*2, 1, inv) *Vdd+
cmos_Ig_leakage(g_tp.min_w_nmos_*TriS1*3, min_w_pmos*TriS1*3, 2, nand)*Vdd+
cmos_Ig_leakage(g_tp.min_w_nmos_*TriS1*3, min_w_pmos*TriS1*3, 2, nor) *Vdd+
w1.power.readOp.gate_leakage + w2.power.readOp.gate_leakage);
// delay calculation
double l_eff = n_inp*flit_size*g_tp.wire_outside_mat.pitch;
Wire wdriver(g_ip->wt, l_eff);
double res = g_tp.wire_outside_mat.R_per_um * (area.w+area.h) + tr_R_on(g_tp.min_w_nmos_*wdriver.repeater_size, NCH, 1);
double cap = g_tp.wire_outside_mat.C_per_um * (area.w + area.h) + n_out*tri_inp_cap + n_inp*tri_out_cap;
delay = horowitz(w1.signal_rise_time(), res*cap, deviceType->Vth/deviceType->Vdd, deviceType->Vth/deviceType->Vdd, RISE);
Wire wreset();
}
void Crossbar::print_crossbar()
{
cout << "\nCrossbar Stats (" << n_inp << "x" << n_out << ")\n\n";
cout << "Flit size : " << flit_size << " bits" << endl;
cout << "Width : " << area.w << " u" << endl;
cout << "Height : " << area.h << " u" << endl;
cout << "Dynamic Power : " << power.readOp.dynamic*1e9 * MIN(n_inp, n_out) << " (nJ)" << endl;
cout << "Leakage Power : " << power.readOp.leakage*1e3 << " (mW)" << endl;
cout << "Gate Leakage Power : " << power.readOp.gate_leakage*1e3 << " (mW)" << endl;
cout << "Crossbar Delay : " << delay*1e12 << " ps\n";
}