This patch adds the write recovery time to the DRAM timing
constraints, and changes the current tRASDoneAt to a more generic
preAllowedAt, capturing when a precharge is allowed to take place.
The part of the DRAM access code that accounts for the precharge and
activate constraints is updated accordingly.
This patch changes the read/write event loop to use a single event
(nextReqEvent), along with a state variable, thus joining the two
control flows. This change makes it easier to follow the state
transitions, and control what happens when.
With the new loop we modify the overly conservative switching times
such that the write-to-read switch allows bank preparation to happen
in parallel with the bus turn around. Similarly, the read-to-write
switch uses the introduced tRTW constraint.
This patch renames the not-so-simple SimpleDRAM to a more suitable
DRAMCtrl. The name change is intended to ensure that we do not send
the wrong message (although the "simple" in SimpleDRAM was originally
intended as in cleverly simple, or elegant).
As the DRAM controller modelling work is being presented at ISPASS'14
our hope is that a broader audience will use the model in the future.
--HG--
rename : src/mem/SimpleDRAM.py => src/mem/DRAMCtrl.py
rename : src/mem/simple_dram.cc => src/mem/dram_ctrl.cc
rename : src/mem/simple_dram.hh => src/mem/dram_ctrl.hh
