Add the following delay to the DRAM controller:
- tCS : Different rank bus turnaround delay
This will be applied for
1) read-to-read,
2) write-to-write,
3) write-to-read, and
4) read-to-write
command sequences, where the new command accesses a different rank
than the previous burst.
The delay defaults to 2*tCK for each defined memory class. Note that
this does not correspond to one particular timing constraint, but is a
way of modelling all the associated constraints.
The DRAM controller has some minor changes to prioritize commands to
the same rank. This prioritization will only occur when the command
stream is not switching from a read to write or vice versa (in the
case of switching we have a gap in any case).
To prioritize commands to the same rank, the model will determine if there are
any commands queued (same type) to the same rank as the previous command.
This check will ensure that the 'same rank' command will be able to execute
without adding bubbles to the command flow, e.g. any ACT delay requirements
can be done under the hoods, allowing the burst to issue seamlessly.
This patch makes a more firm connection between the DDR3-1600
configuration and the corresponding datasheet, and also adds a
DDR3-2133 and a DDR4-2400 configuration. At the moment there is also
an ongoing effort to align the choice of datasheets to what is
available in DRAMPower.
This patch extends the current timing parameters with the DRAM cycle
time. This is needed as the DRAMPower tool expects timestamps in DRAM
cycles. At the moment we could get away with doing this in a
post-processing step as the DRAMPower execution is separate from the
simulation run. However, in the long run we want the tool to be called
during the simulation, and then the cycle time is needed.
This patch adds the tRTP timing constraint, governing the minimum time
between a read command and a precharge. Default values are provided
for the existing DRAM types.
This patch adds the write recovery time to the DRAM timing
constraints, and changes the current tRASDoneAt to a more generic
preAllowedAt, capturing when a precharge is allowed to take place.
The part of the DRAM access code that accounts for the precharge and
activate constraints is updated accordingly.
This patch changes the read/write event loop to use a single event
(nextReqEvent), along with a state variable, thus joining the two
control flows. This change makes it easier to follow the state
transitions, and control what happens when.
With the new loop we modify the overly conservative switching times
such that the write-to-read switch allows bank preparation to happen
in parallel with the bus turn around. Similarly, the read-to-write
switch uses the introduced tRTW constraint.
This patch renames the not-so-simple SimpleDRAM to a more suitable
DRAMCtrl. The name change is intended to ensure that we do not send
the wrong message (although the "simple" in SimpleDRAM was originally
intended as in cleverly simple, or elegant).
As the DRAM controller modelling work is being presented at ISPASS'14
our hope is that a broader audience will use the model in the future.
--HG--
rename : src/mem/SimpleDRAM.py => src/mem/DRAMCtrl.py
rename : src/mem/simple_dram.cc => src/mem/dram_ctrl.cc
rename : src/mem/simple_dram.hh => src/mem/dram_ctrl.hh
